P-Channel MOSFET. ME4925 Datasheet

ME4925 MOSFET. Datasheet pdf. Equivalent

Part ME4925
Description Dual P-Channel MOSFET
Feature Dual P-Channel 30V (D-S) MOSFET ME4925/ME4925-G GENERAL DESCRIPTION The ME4925 is the Dual P-Chann.
Manufacture Matsuki
Datasheet
Download ME4925 Datasheet

Dual P-Channel 30V (D-S) MOSFET ME4925/ME4925-G GENERAL DE ME4925 Datasheet
Dual P-Channel 30V (D-S) MOSFET ME4925/ME4925-G GENERAL DE ME4925-G Datasheet
Recommendation Recommendation Datasheet ME4925 Datasheet




ME4925
Dual P-Channel 30V (D-S) MOSFET
ME4925/ME4925-G
GENERAL DESCRIPTION
The ME4925 is the Dual P-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
RDS(ON)20m@VGS=-10V
RDS(ON)26m@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
(SOP-8)
Top View
e Ordering Information: ME4925 (Pb-free)
ME4925-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
Maximum Ratings
-30
±20
-8
-6.3
-32
2
1.3
-55 to 150
62.5
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃/W
DCC
正式發行
Jul, 2013-Ver1.0
01



ME4925
Dual P-Channel 30V (D-S) MOSFET
ME4925/ME4925-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max
STATIC
VBR(DSS) Drain-source breakdown voltage
VGS=0V, ID=250μA
-30
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250μA
-1
-3
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
±100
IDSS
Zero Gate Voltage Drain Current
VDS=-30V, VGS=0V
-1
RDS(ON)
Drain-Source On-Resistance
VGS=-10V, ID= -7.1A
VGS=-4.5V, ID= -5.5A
16 20
21 26
VSD Diode Forward Voltage
IS=-1.7A, VGS=0V
-0.7 -1.2
DYNAMIC
Qg Total Gate Charge
37
Qgs Gate-Source Charge
VDS=-15V, VGS=-10V, ID=-9.1A
5.6
Qgd Gate-Drain Charge
8.7
Ciss Input capacitance
1490
Coss
Output Capacitance
VDS=-15V, VGS=0V, f=1MHz
202
Crss
Reverse Transfer Capacitance
183
Rg
td(on)
tr
td(off)
tf
Gate-Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=0V, VGS=0V, f=1MHz
VDD=-15V, RL =15Ω
ID=-1.0A, VGEN=-10V
RG=6Ω
6.2
39.1
16.9
107
26.7
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Unit
V
nA
μA
mΩ
V
nC
pF
Ω
ns
Jul, 2013-Ver1.0
DCC
正式發行
02





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