N-Channel MOSFET. ME4938D-G Datasheet

ME4938D-G MOSFET. Datasheet pdf. Equivalent

Part ME4938D-G
Description Dual N-Channel MOSFET
Feature ME4938D/ME4938D-G Dual N-Channel 20-V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME4938D.
Manufacture Matsuki
Datasheet
Download ME4938D-G Datasheet

ME4938D/ME4938D-G Dual N-Channel 20-V (D-S) MOSFET, ESD Pro ME4938D-G Datasheet
Recommendation Recommendation Datasheet ME4938D-G Datasheet




ME4938D-G
ME4938D/ME4938D-G
Dual N-Channel 20-V (D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME4938D is the Dual N-Channel logic enhancement mode
power field effect transistors, using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on state resistance. These devices are particularly suited
for low voltage application such as cellular phone, notebook
computer power management and other battery powered circuits,
and low in-line power loss that are needed in a very small outline
surface mount package.
PIN CONFIGURATION
FEATURES
RDS(ON)16 mΩ@VGS=4.5V
RDS(ON)23 mΩ@VGS=2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
(SOP-8)
Top View
Ordering Information: ME4938D (Pb-free)
ME4938D-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
Maximum Ratings
20
±12
8.8
7.0
35
2
1.2
-55 to 150
62.5
The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃/W
DCC
正式發行
Jun,2014-Ver1.0
01



ME4938D-G
ME4938D/ME4938D-G
Dual N-Channel 20-V (D-S) MOSFET, ESD Protection
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max
STATIC
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
20
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
0.5
1.5
IGSS Gate Leakage Current
VDS=0V, VGS=±10V
±10
IDSS Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
±1
RDS(ON)
Drain-Source On-Resistance
VGS=4.5V, ID= 9.4A
VGS=2.5V, ID= 8.3A
11 16
17 23
VSD Diode Forward Voltage
DYNAMICb
Qg Total Gate Charge
IS=1.3A, VGS=0V
VDS=10V, VGS=10V, ID=9.4A
0.7
31.1
Qg Total Gate Charge
14.5
Qgs Gate-Source Charge
VDS=10V, VGS=4.5V, ID=9.4A
3.9
Qgd Gate-Drain Charge
4.9
Ciss Input Capacitance
1897
Coss
Output Capacitance
VDS=10V, VGS=0V, f=1MHz
995
Crss Reverse Transfer Capacitance
535
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=10V, RL =10Ω
ID=1A, VGEN=4.5V
RG=6Ω
20
24.4
93.9
11.1
Notes: a. pulse test:pulse width300us, duty cycle2%,Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice
Unit
V
V
μA
mΩ
V
nC
pF
ns
Jun,2014-Ver1.0
DCC
正式發行
02





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