N-Channel MOSFET. ME4936 Datasheet

ME4936 MOSFET. Datasheet pdf. Equivalent

Part ME4936
Description Dual N-Channel MOSFET
Feature Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4936 is the Dual N-Channel logic enhancem.
Manufacture Matsuki
Datasheet
Download ME4936 Datasheet

Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4 ME4936 Datasheet
Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4 ME4936-G Datasheet
Recommendation Recommendation Datasheet ME4936 Datasheet




ME4936
Dual N-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4936 is the Dual N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount
package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4936/ME4936-G
FEATURES
RDS(ON) 36m@VGS=10V
RDS(ON) 45m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
LCD TV & Monitor Display inverter
CCFL inverter
e Ordering Information: ME4936(Pb-free)
ME4936-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)
Parameter
Symbol
10 secs Steady State Unit
Drain-Source Voltage
VDSS 30 V
Gate-Source Voltage
VGSS ±20 V
Continuous Drain
Current(Tj=150 )
TA=25
TA=70
6.6 5.1
ID A
5.1 4
Pulsed Drain Current
IDM 30 A
Continuous Source Current (Diode Conduction)
IS
1.7
0.9 A
Maximum Power Dissipation
TA=25
TA=70
2.5
PD
1.5
1.5
W
0.9
Operating Junction Temperature
TJ -55 to 150
Storage Temperature Range
Tstg -55 to 150
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
RθJA
RθJC
50 82
50
DCC
正式發行
July,2008-Ver4.0
01



ME4936
Dual N-Channel 30-V (D-S) MOSFET
ME4936/ME4936-G
Electrical Characteristics (TA =25 Unless Otherwise Specified)
Symbol Parameter
Conditions
Min Typ
STATIC
BVDSS
VGS(th)
IGSS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
IDSS Zero Gate Voltage Drain Current
VGS=0V, ID=250 A
VDS=VGS, ID=250 A
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VDS=30V, VGS=0V
TJ=55
30
1.0 1.4
RDS(ON)
VSD
Drain-Source On-Resistance a
Diode Forward Voltage
VGS=10V, ID= 5.9A
VGS=4.5V, ID= 4.9A
IS=1.7A, VGS=0V
23
34
0.8
DYNAMIC
Rg Gate resistance
Ciss Input capacitance
VGS=0V, VDS=0V, f=1MHz
0.8
380
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
VDS=15V, VGS=0V, f=1.0MHz
68
18
Qg Total Gate Charge
13
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall time
Notes: a. Pulse test; pulse width 300us, duty cycle
2%
VDS=15V, VGS=10V, ID=5.9A
VDD=15V, RL =15
ID=1.0A, VGEN=10V
RG=6
3.5
3
9
14
32
5
Max Unit
3.0
±100
1
5
V
V
nA
A
36
m
45
1.2 V
450
pF
20
nC
12
18
ns
42
8
July,2008-Ver4.0
DCC
正式發行
02





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