N-Channel MOSFET. ME4970A-G Datasheet

ME4970A-G MOSFET. Datasheet pdf. Equivalent

Part ME4970A-G
Description Dual N-Channel MOSFET
Feature Dual N-Channel 30-V (D-S) MOSFET ME4970A /ME4970A-G GENERAL DESCRIPTION The ME4970A-G is the Dual .
Manufacture Matsuki
Datasheet
Download ME4970A-G Datasheet

Dual N-Channel 30-V (D-S) MOSFET ME4970A /ME4970A-G GENERA ME4970A-G Datasheet
Recommendation Recommendation Datasheet ME4970A-G Datasheet




ME4970A-G
Dual N-Channel 30-V (D-S) MOSFET
ME4970A /ME4970A-G
GENERAL DESCRIPTION
The ME4970A-G is the Dual N-Channel logic enhancement mode
power field effect transistors are produced using high cell density,
FEATURES
RDS(ON)14mΩ@VGS=10V
RDS(ON)20mΩ@VGS=4.5V
DMOS trench technology. This high density process is especially
Super high density cell design for extremely low RDS(ON)
tailored to minimize on-state resistance. These devices are
Exceptional on-resistance and maximum DC current
particularly suited for low voltage application such as cellular phone
capability
and notebook computer power management and other battery
powered circuits where high-side switching and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
(SOP-8)
Top View
* The Ordering Information: ME4970A /ME4970A-G(Green product-Halogen -free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
Maximum Ratings
30
±20
10
8
40
2
1.2
-55 to 150
62.5
Unit
V
V
A
A
W
/W
DCC
正式發行
Aug, 2016-Ver1.2
01



ME4970A-G
Dual N-Channel 30-V (D-S) MOSFET
ME4970A /ME4970A-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
STATIC
Min Typ Max Unit
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
30
1
V
3V
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
±100
1
nA
μA
RDS(ON)
Drain-Source On-Resistance a
VGS=10V, ID= 10A
VGS=4.5V, ID= 8A
10 14
mΩ
15 20
VSD Diode Forward Voltage
IS=8.2A, VGS=0V
0.8 1.2
V
DYNAMIC
Qg Total Gate Charge
12.3
Qgs Post-Vth Gate-Source Charge
VDS=10V, VGS=4.5V, ID=8.2A
5.7
nC
Qgd Gate-Drain Charge
5.5
Ciss Input Capacitance
1138
Coss
Output Capacitance
VDS=15V, VGS=0V, f=1MHz
272 pF
Crss
Reverse Transfer Capacitance
121
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=15V, RL =15Ω
ID=1A, VGEN=10V,
RG=6Ω
16.3
16.4
45.7
7.7
Notes: a. pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice
ns
Aug, 2016-Ver1.2
DCC
正式發行
02





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