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Dual N-Channel 30-V (D-S) MOSFET
ME4970A /ME4970A-G
GENERAL DESCRIPTION
The ME4970A-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density,
FEATURES
● RDS(ON)≦14mΩ@VGS=10V ● RDS(ON)≦20mΩ@VGS=4.5V
DMOS trench technology. This high density process is especially
● Super high density cell design for extremely low RDS(ON)
tailored to minimize on-state resistance. These devices are
● Exceptional on-resistance and maximum DC current
particularly suited for low voltage application such as cellular phone
capability
and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter
(SOP-8) Top View
* The Orderin.