N-Channel MOSFET. ME4972-G Datasheet

ME4972-G MOSFET. Datasheet pdf. Equivalent


Part ME4972-G
Description Dual N-Channel MOSFET
Feature Dual N-Channel 150-V (D-S) MOSFET GENERAL DESCRIPTION The ME4972-G is the N-Channel logic enhancemen.
Manufacture Matsuki
Datasheet
Download ME4972-G Datasheet

Dual N-Channel 150-V (D-S) MOSFET GENERAL DESCRIPTION The ME ME4972-G Datasheet
Recommendation Recommendation Datasheet ME4972-G Datasheet




ME4972-G
Dual N-Channel 150-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4972-G is the N-Channel logic enhancement mode power
field effect transistors, using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on state resistance. These devices are particularly suited
for low voltage application such as cellular phone, notebook
computer power management and other battery powered circuits,
and low in-line power loss that are needed in a very small outline
surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4972-G
FEATURES
RDS(ON)376mΩ@VGS=10V
RDS(ON)360mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
The Ordering Information: ME4972-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA=25
TA=70
ID
Pulsed Drain Current
IDM
Maximum Power Dissipation
TA=25
TA=70
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Thermal Resistance-Junction to Case *
The * * The device mounted on 1in2 FR4 board with 2 oz copper
RθJA
Maximum Ratings
150
±20
1.9
1.5
7
2
1.3
-55 to 150
62.5
Unit
V
V
A
A
W
/W
DCC
正式發行
Mar, 2016-Ver1.0
01



ME4972-G
Dual N-Channel 150-V (D-S) MOSFET
ME4972-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
150
1
V
3V
IGSS Gate Leakage Current
IDSS Zero Gate Voltage Drain Current
VDS=0V, VGS=±20V
VDS=120V, VGS=0V
±100
1
nA
μA
RDS(ON)
Drain-Source On-Resistance a
VGS=10V, ID= 7A
VGS=4.5V, ID= 6A
313 376
mΩ
300 360
VSD Diode Forward Voltage
IS=1.8A, VGS=0V
1.3 V
DYNAMIC
Qg Total Gate Charge
16.1
Qgs Gate-Source Charge
VDS=75V, VGS=10V, ID=7A
5.2 nC
Qgd Gate-Drain Charge
4.2
Ciss Input Capacitance
657
Coss
Output Capacitance
VDS=25V, VGS=0V,f=1MHz
34 pF
Crss
Reverse Transfer Capacitance
7
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=75V, RL =10.68Ω,
VGS=10V, RG=6Ω
ID=7A
9.8
11.1
29.3
24.4
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
ns
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Mar, 2016-Ver1.0
DCC
正式發行
02





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)