N-Channel MOSFET. ME4970 Datasheet

ME4970 MOSFET. Datasheet pdf. Equivalent

Part ME4970
Description Dual N-Channel MOSFET
Feature Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4970 is the Dual N-Channel logic enhancem.
Manufacture Matsuki
Datasheet
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ME4970
Dual N-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4970 is the Dual N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4970/ME4970-G
FEATURES
RDS(ON)16mΩ@VGS=10V
RDS(ON)20mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
* The Ordering Information: ME4970 (Pb-free)
ME4970-G(Green product-Halogen -free) product)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA=25
TA=70
TA=25
TA=70
Symbol
VDS
VGS
ID
IDM
PD
TJ
Parameter
Symbol
Thermal Resistance-Junction to Ambient*
t10 sec
Steady-State
Thermal Resistance-Junction to Foot (Drain) Steady-State
*The device mounted on 1in2 FR4 board with 2 oz copper
RθJA
RθJF
Maximum Ratings
30
±20
10
8.3
38
2
1.2
-55 to 150
Limit
Typ Max
52 62.5
93 110
35 40
Unit
V
V
A
A
W
Unit
D/CW C
正式發行
Feb, 2012-Ver4.4
01



ME4970
Dual N-Channel 30-V (D-S) MOSFET
ME4970/ME4970-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
STATIC
Min Typ Max Unit
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
30
1
3
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
±100
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
1
RDS(ON)
Drain-Source On-Resistance a
VGS=10V, ID= 10A
VGS=4.5V, ID= 8A
13.2 16
16.8 20
VSD Diode Forward Voltage
IS=8.2A, VGS=0V
0.8 1.2
DYNAMIC
Rg Gate Resistance
f=1MHz
1
Qg Total Gate Charge
9.5
Qgs Post-Vth Gate-Source Charge
VDS=10V, VGS=4.5V, ID=8.2A
3.6
Qgd Gate-Drain Charge
3.4
Ciss Input Capacitance
841
Coss
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
250
Crss Reverse Transfer Capacitance
71
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=15V, RL =15Ω
ID=1A, VGEN=10V,
RG=6Ω
14
12
43
4
Notes: a. pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice
V
V
nA
μA
mΩ
V
Ω
nC
pF
ns
Feb, 2012-Ver4.4
DCC
正式發行
02





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