N-Channel MOSFET. ME4954 Datasheet

ME4954 MOSFET. Datasheet pdf. Equivalent

Part ME4954
Description Dual N-Channel MOSFET
Feature Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME4954 is the Dual N-Channel logic enhance.
Manufacture Matsuki
Datasheet
Download ME4954 Datasheet

Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME ME4954 Datasheet
Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME ME4954-G Datasheet
Recommendation Recommendation Datasheet ME4954 Datasheet




ME4954
Dual N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4954 is the Dual N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits ,
and low in-line power loss are needed in a very small outline surface
mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4954/ME4954-G
FEATURES
RDS(ON)80mΩ@VGS=10V
RDS(ON)98mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
* The Ordering Information: ME4954 (Pb-free)
ME4954-G (Green product-Halogen free )
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
Maximum Ratings
100
±20
4
3.2
16
2
1.3
-55 to 150
62.5
Unit
V
V
A
A
W
/W
DCC
正式發行
Oct, 2012-Ver1.2
01



ME4954
ME4954/ME4954-G
Dual N- Channel 100V (D-S) MOSFET
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
100 V
1 2.5 V
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
IDSS
Zero Gate Voltage Drain Current
VDS=80V, VGS=0V
±100
1
nA
μA
RDS(ON)
Drain-Source On-State Resistancea
VGS=10V, ID= 4A
VGS=4.5V, ID= 3.2A
65 80
mΩ
75 98
VSD Diode Forward Voltage
IS=12A, VGS=0V
1.3 V
DYNAMIC
Qg Total Gate Charge
VDS=80V, VGS=10V, ID=4A
28.8
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS=80V, VGS=5V, ID=4A
17.4
nC
9.9
Qgd Gate-Drain Charge
5.6
Ciss
Input capacitance
1106
Coss
Output Capacitance
VDS=20V, VGS=0V, F=1MHz
73 pF
Crss
Reverse Transfer Capacitance
46
Rg Gate Resistance
VDS=0V, VGS=0V, f=1MHz
2
td(on)
Turn-On Delay Time
27.3
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDS=50V, RL =12.5Ω
VGEN=5V, RG=4.7Ω
ID=4A
89.9
36.8
tf Turn-Off Fall Time
11
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Ω
ns
Oct, 2012-Ver1.2
DCC
正式發行
02





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