ME4954

Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME4954 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4954/ME4954-G FEATURES ● RDS(ON)≦80mΩ@VGS=10V ● RDS(ON)≦98mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter * The Ordering Information: ME4954 (Pb-free) ME4954-G (Green product-Halogen free ) Absolute Maximum Ratings (...