P-Channel MOSFET. ME4956 Datasheet

ME4956 MOSFET. Datasheet pdf. Equivalent


Part ME4956
Description N- & P-Channel MOSFET
Feature N- and P-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME4956 is the N- and P-Channel logic enh.
Manufacture Matsuki
Datasheet
Download ME4956 Datasheet

N- and P-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME4956 Datasheet
N- and P-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME4956-G Datasheet
Recommendation Recommendation Datasheet ME4956 Datasheet




ME4956
N- and P-Channel 100-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4956 is the N- and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4956/ME4956-G
FEATURES
RDS(ON)116mΩ@VGS=10V (N-Ch)
RDS(ON)133mΩ@VGS=4.5V (N-Ch)
RDS(ON)215mΩ@VGS=-10V (P-Ch)
RDS(ON)225mΩ@VGS=-4.5V (P-Ch)
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
LCD TV & Monitor Display inverter
CCFL inverter
LCD Display inverter
* The Ordering Information: ME4956 (Pb-free)
ME4956-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient *
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
N-Channel
100
P-Channel
-100
±20 ±20
3.3 2.4
2.6 1.9
13 10
22
1.3 1.3
-55 to 150
62.5 62.5
Unit
V
A
W
/W
*The device mounted on 1in2 FR4 board with 2 oz copper
DCC
正式發行
Nov, 2015-Ver1.0
01



ME4956
ME4956/ME4956-G
N- and P-Channel 100-V (D-S) MOSFET
Electrical Characteristics (Tj =25Unless Otherwise Specified)
Symbol Parameter
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
Conditions
VGS=0V, ID=250μA
VGS=0V, ID=-250μA
VDS=VGS, ID=250μA
VDS=VGS, ID=-250μA
Min Typ Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
100
-100
1
-1
V
3
-3
V
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
VDS=0V, VGS=±20V
N-Ch
P-Ch
±100
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=80V, VGS=0V
VDS=-80V, VGS=0V
N-Ch
P-Ch
1
-1
μA
RDS(ON)
Drain-Source On-State Resistancea
VGS=10V, ID= 5.5A
VGS=-10V, ID= -5.5A
VGS=4.5V, ID= 4A
VGS=-4.5V, ID= -4A
N-Ch
P-Ch
N-Ch
P-Ch
89 116
165 215
mΩ
103 133
173 225
VSD Diode Forward Voltage
IS=5.5A, VGS=0V
IS=-5.5A, VGS=0V
N-Ch
P-Ch
0.85
-0.88
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
N-Channel
VDS=50V, VGS=10V, ID=9.6A
P-Channel
VDS=-50V,VGS=-10V,ID=-5.5A
N-Channell
VDS=50V, VGS=4.5V, ID=9.6A
P-Channel
VDS=-50V,VGS=-4.5V,ID=-5.5A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
21.9
26.9
10.8
12.7
5.4
6.3
6.5
5.8
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Channel
VDS=25V, VGS=0V, f=1MHz
P-Channel
VDS=-25V, VGS=0V, f=1MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
848
1236
43
59
33
41
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
N-Channel
VDD=50V, RL =50Ω
ID=1A, VGS=10V, RG=6Ω
P-Channel
VDD=-50V, RL =50Ω
ID=-1A, VGS=-10V,RG=6Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
12.5
36.1
25
7.9
33.2
67.8
22.1
6.7
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
1.1
-1.1
V
nC
pF
ns
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
Nov, 2015-Ver1.0
02





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