P-Channel MOSFET. ME8117-G Datasheet

ME8117-G MOSFET. Datasheet pdf. Equivalent

Part ME8117-G
Description P-Channel MOSFET
Feature P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME8117 is the P-Channel logic enhancement mode po.
Manufacture Matsuki
Datasheet
Download ME8117-G Datasheet

P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME8117 is ME8117-G Datasheet
Recommendation Recommendation Datasheet ME8117-G Datasheet




ME8117-G
P-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME8117 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME8117/ME8117-G
FEATURES
RDS(ON)5.2mΩ@VGS=-10V
RDS(ON)9.5mΩ@VGS=-4V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
LCD Display inverter
The Ordering Information: ME8117(Pb-free)
ME8117-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
The * * The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
Maximum Ratings
-30
±20
-17.3
-13.9
-69
2.5
1.6
-55 to 150
50
1.2
Unit
V
V
A
A
W
/W
DCC
正式發行
Jun, 2015-Ver2.2
01



ME8117-G
P-Channel 30V (D-S) MOSFET
ME8117/ME8117-G
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol
STATIC
VBR(DSS)
VGS(th)
IGSS
IDSS
Parameter
Drain-source breakdown voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
Limit
Min Typ Max Unit
ID=-10mA, VGS=0V
VGS= VDS, ID=-250μA
VDS=0V, VGS=±20V
VDS=-30V, VGS=0V
VGS=-10V, ID= -9A
VGS=-4V, ID= -9A
ID=-18A, VGS=0V
-30 V
-1 -3.0 V
±100
-1
nA
μA
4 5.2
mΩ
7 9.5
-0.8 V
VDD=-24V, VGS=-10V, ID=-18A
VDD=-24V, VGS=-4.5V, ID=-18A
VDS=-15V, VGS=0V, f=1MHz
VDD=-15V, RL =15Ω
VGS=-10V,RG=4.7Ω
146
78
24
40
6150
950
327
75
32
280
88
nC
pF
ns
Notes:
a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
1.2
Jun, 2015-Ver2.2
DCC
正式發行
02





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)