RN2209

RN2207~RN2209 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2207,RN2208,RN2209 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN1207~RN1209 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) RN2207 RN2208 RN2209 10 22 47 R2 (kΩ) 47 47 22 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13g (typ.) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2207 RN2208 RN2209 VCBO VCEO VEBO IC PC Tj Tstg −50 −50 −6 −7 −15 −100 300 150 −55~150 V V V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significa...