BT136-600E

isc Triacs INCHANGE Semiconductor BT136-600E FEATURES ·With TO-220 package ·.Glass passivated triacs in a plastic envelope, Intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(RMS) RMS on-state current (full sine wave) ITSM Non-repetitive peak on-state current PGM Peak gate power dissipation PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=125℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=125℃ Ⅰ IGT Gate trigger current Ⅱ VD=12V; IT= 0.1A, RL= 30Ω Ⅲ Ⅳ VTM On-state voltage IH Holding current VGT Gate trigger voltage IT= 5A IGT= 0.1A, VD= 12V VD=12V; RL= 30Ω all quadrant MIN 600 600 4 25 5 0.5 125 -45~150 UNIT V V A A W W ℃ ℃ MIN MAX UNIT 0.01 0.5 mA 0.01 0.5 mA 10 10 mA 10 25 1.7 V 15 mA 1.5 V isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Triacs INCHANGE Semiconductor BT136-600E NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notif...