Triacs
isc Triacs
INCHANGE Semiconductor
BT136-600E
FEATURES ·With TO-220 package ·.Glass passivated triacs in a plastic
enve...
Description
isc Triacs
INCHANGE Semiconductor
BT136-600E
FEATURES ·With TO-220 package ·.Glass passivated triacs in a plastic
envelope, Intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak off-state voltage
IT(RMS) RMS on-state current (full sine wave)
ITSM Non-repetitive peak on-state current
PGM Peak gate power dissipation
PG(AV) Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=125℃
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=125℃
Ⅰ
IGT
Gate trigger current
Ⅱ
VD=12V; IT= 0.1A, RL= 30Ω Ⅲ
Ⅳ
VTM On-state voltage
IH
Holding current
VGT Gate trigger voltage
IT= 5A IGT= 0.1A, VD= 12V VD=12V; RL= 30Ω all quadrant
MIN
600 600
4 25 5 0.5 125 -45~150
UNIT
V V A A W W ℃ ℃
MIN MAX UNIT
0.01 0.5
mA
0.01 0.5
mA
10
10 mA
10
25
1.7 V
15 mA
1.5 V
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isc Triacs
INCHANGE Semiconductor
BT136-600E
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notif...
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