Silicon N-Channel Power MOSFET HPU600R760MB
General Description：
HPU600R760MB, the silicon N-channel Enhanced MOSFETs, ...
Silicon N-Channel Power MOSFET HPU600R760MB
General Description：
HPU600R760MB, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-251, which accords with the RoHS standard.
VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ
Features：
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tj= 25℃ unless otherwise specified）：
○R
650 V 5.5 A 85 W 0.70 Ω
Symbol
VDSS ID a1 IDMa2 VGSS EAS a3 dv/dt a4
PD TJ，Tstg
TL
Parameter
Drain-to-Source Voltage(VGS=0V)
Continuous Drain Current TC = 25 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Rec...
