Power MOSFET. HPU600R760MB Datasheet

HPU600R760MB MOSFET. Datasheet pdf. Equivalent

Part HPU600R760MB
Description Silicon N-Channel Power MOSFET
Feature Silicon N-Channel Power MOSFET HPU600R760MB General Description: HPU600R760MB, the silicon N-channe.
Manufacture HUAJING MICROELECTRONICS
Datasheet
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Silicon N-Channel Power MOSFET HPU600R760MB General Descrip HPU600R760MB Datasheet
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HPU600R760MB
Silicon N-Channel Power MOSFET
HPU600R760MB
General Description
HPU600R760MB, the silicon N-channel Enhanced
MOSFETs, is obtained by the super junction technology which
reduces the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package type is TO-251, which accords
with the RoHS standard.
VDSS(Tjmax)
ID
PD(TC=25)
RDS(ON)Typ
Features
l Fast Switching
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTj= 25unless otherwise specified):
R
650 V
5.5 A
85 W
0.70
Symbol
VDSS
ID a1
IDMa2
VGSS
EAS a3
dv/dt a4
PD
TJTstg
TL
Parameter
Drain-to-Source Voltage(VGS=0V)
Continuous Drain Current TC = 25 °C
Pulsed Drain Current TC = 25 °C
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation(Tc=25°C)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Rating
600
5.5
16.5
±30
120
15
85
55+150
300
Units
V
A
A
V
mJ
V/ns
W
WUXI CHI N A RE SOURCE S HUAJI NG M I CROELECTR ONI CS CO., LTD.
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HPU600R760MB
HPU600R760MB
R
Electrical CharacteristicsTj= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 600V, VGS= 0V,
Tj= 25
VDS =480V, VGS= 0V,
Tj = 125
VGS =+20V VDS= 0V,
VGS =-20V VDS= 0V,
Rating
Min. Typ. Max.
600 -- --
-- 0.66 --
-- -- 1
-- -- 10
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=2.5A
VDS = VGS, ID = 250µA
Rating
Min. Typ. Max.
-- 0.70 0.76
2.0 -- 4.0
Units
V
Dynamic Characteristics
Symbol
Parameter
Rg Gate resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
f = 1.0MHz
VGS = 0V VDS = 50V
f = 1.0MHz
Rating
Min. Typ. Max.
-- 4.5 --
-- 360 --
-- 78 --
-- 1.2 --
Units
pF
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Vplateau
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Gate Plateau Voltage
Test Conditions
ID =5A VDD =400V
RG =10
ID =5A VDD =480V
VGS = 10V
Rating
Min. Typ. Max.
-- 11 --
-- 9.0 --
-- 19 --
-- 5.2 --
-- 11.9 --
-- 1.9 --
-- 7.1
-- 5.3
--
--
Units
ns
nC
V
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