Silicon N-Channel Power MOSFET CS4J60F A9
General Description：
CS4J60F A9, the silicon N-channel Enhanced MOSFETs, is o...
Silicon N-Channel Power MOSFET CS4J60F A9
General Description：
CS4J60F A9, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-220F, which accords with the RoHS standard.
VDSS ID PD(TC=25℃) RDS(ON)Typ
Features：
Fast Switching Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
○R
600 V 4A 25 W 1.5 Ω
Symbol
VDSS
ID IDMa1 VGSS EAS a2 dv/dt a3
PD TJ，Tstg
TL
Parameter Drain-to-Source Voltage(VGS=0V)
Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation(T=2...
