Power MOSFET. CSF501D Datasheet

CSF501D MOSFET. Datasheet pdf. Equivalent

Part CSF501D
Description Silicon N-Channel Power MOSFET
Feature Silicon N-Channel Power MOSFET CSF501D ○R Features: l N-Channel l ESD improved Capability l Deplet.
Manufacture HUAJING MICROELECTRONICS
Datasheet
Download CSF501D Datasheet

Silicon N-Channel Power MOSFET CSF501D ○R Features: l N-Ch CSF501D Datasheet
Recommendation Recommendation Datasheet CSF501D Datasheet




CSF501D
Silicon N-Channel Power MOSFET
CSF501D
R
Features
l N-Channel
l ESD improved Capability
l Depletion Mode
l dv/dt rated
l Pb-free lead plating;ROHS compliant
l Halogen Free
VDSX
IDSS,min
RDS(ON),max
600
0.012
700
V
A
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSX
ID
ID
a1
M
VGS
dv/dt a2
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC =70 °C
Pulsed Drain Current
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Power Dissipation
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
Rating
600
0.030
0.024
0.120
±20
5.0
0.5
300
15055 to 150
300
Units
V
A
A
A
V
V/ns
W
V
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSX
ID(off)
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage VGS=-5V, ID=250µA
Off-state Drain to Source Current
Gate to Source Forward Leakage
VDS =600V, VGS= -5V
VDS =480V, VGS= -5V
Ta=125°C
VGS =+10V
Gate to Source Reverse Leakage
VGS =-10V
Rating
Min. Typ. Max.
600 --
--
-- -- 0.1
10
-- -- 100
-- -- -100
Un
its
V
µA
µA
nA
nA
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 8 2015 V01



CSF501D
CSF501D
R
ON Characteristics
Symbol
Parameter
Idss On-state drain current
RDS(ON)
VGS(TH)
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
VGS=0V, VDS =25V
VGS=0V,ID=3mA
VGS=10V,ID=16mA
VDS = 3V, ID =8.0µA
Rating
Min. Typ. Max.
12
-- 350 700
400 800
-2.7 -1.8 -1.0
Units
mA
V
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VDS=50V, ID =0.01A
VGS =-5V VDS = 25V
f = 1.0MHz
Rating
Units
Min. Typ. Max.
0.008 0.017 --
S
-- 50
-- 4.53
pF
-- 1.08
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
ID =0.01A VDD =300V
VGS = -57V
RG =6.0
ID =0.01A VDD =400V
VGS = -5V to 5V
Rating
Min. Typ. Max.
-- 9.9 --
-- 55.8 --
-- 56.4 --
-- 136 --
-- 1.14
-- 0.5
-- 0.37
Units
ns
nC
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
Ta=25°C
IF=16mA,VGS=-5V
IF=0.01A,Tj = 25°C
dIF/dt=100A/us,
VR=300V
Min.
--
--
--
--
--
Rating
Typ. Max.
-- 0.025
-- 0.100
-- 1.2
243 --
636 --
Units
A
A
V
ns
nC
Symbol
RθJA
Parameter
Junction-to-Ambient
Typ. Units
250 /W
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 8 2 015V01





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