BD538

BD533/5/7 BD534/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS s BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are BD534, BD536, and BD538 respectively. TO-220 1 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CES V CEO V EBO I C, I E IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector and Emitter Current Base Current Total Dissipation at T c ≤ 25 C o Value BD533 BD534 45 45 45 BD535 BD536 60 60 60 5 8 1 50 -65 to 150 150 BD537 BD538 80 80 80 Uni t V V V V A A W o o Storage Temperature Max. O perating Junction Temperature C C For PNP types voltage and current values are negative. June 1997 1/4 BD533/BD534/BD535/BD536/BD537/BD538 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.5 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s for BD533/534 for BD535/536 for BD537/538 for BD533/534 for BD535/536 for BD537/538 V EB = 5 V I...