Power MOSFET. HPD650R600SA Datasheet

HPD650R600SA MOSFET. Datasheet pdf. Equivalent

Part HPD650R600SA
Description Silicon N-Channel Power MOSFET
Feature Silicon N-Channel Power MOSFET HPD650R600SA ○R General Description: HPD650R600SA, the silicon N-ch.
Manufacture HUAJING MICROELECTRONICS
Datasheet
Download HPD650R600SA Datasheet

Silicon N-Channel Power MOSFET HPD650R600SA ○R General Des HPD650R600SA Datasheet
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HPD650R600SA
Silicon N-Channel Power MOSFET
HPD650R600SA
R
General Description
HPD650R600SA, the silicon N-channel Enhanced
MOSFETs, is obtained by the super junction technology which
reduces the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package type is TO-252, which accords
with the RoHS standard.
VDSS
ID
PD(TC=25)
RDS(ON)typ
Features
l Fast Switching
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
650 V
9A
125 W
0.52
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dta3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
650
9
27
±30
90
5.0
125
55+150
300
Units
V
A
A
V
mJ
V/ns
W
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 17V0 1



HPD650R600SA
HPD650R600SA
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=4.5A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VGS = 0V VDS = 25V
f = 1.0MHz
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
ID =9A VDD = 325V
RG =10
ID =9A VDD =520V
VGS = 10V
Rating
Min. Typ. Max.
650 -- --
-- 0.67 --
-- -- 1
-- -- 100
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 0.52 0.6
24
Units
V
Rating
Min. Typ. Max.
-- 670 --
-- 496 --
-- 18 --
Units
pF
Rating
Min. Typ. Max.
-- 15 42
-- 28 60
-- 43 80
-- 18 32
-- 23 --
-- 4 --
-- 12 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 17V0 1





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