Silicon N-Channel Power MOSFET HPD600R2K3DN
○R
General Description:
HPD600R2K3DN, the silicon N-channel Enhanced
VDM...
Silicon N-Channel Power MOSFET HPD600R2K3DN
○R
General Description:
HPD600R2K3DN, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the double-shield Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-252, which accords with the RoHS standard.
Features:
l Superior switching performance l Low on resistance(Rdson≤2.3Ω) l Low gate charge (Typical Data:11.5nC) l Low reverse transfer capacitances(Typical:5.8pF) l 100% Single pulse avalanche energy test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse...