DatasheetsPDF.com

HPA650R700DN Dataheets PDF



Part Number HPA650R700DN
Manufacturers HUAJING MICROELECTRONICS
Logo HUAJING MICROELECTRONICS
Description Silicon N-Channel Power MOSFET
Datasheet HPA650R700DN DatasheetHPA650R700DN Datasheet (PDF)

Silicon N-Channel Power MOSFET HPA650R700DN ○R General Description: HPA650R700DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features: l Superior switching performance l L.

  HPA650R700DN   HPA650R700DN


Document
Silicon N-Channel Power MOSFET HPA650R700DN ○R General Description: HPA650R700DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features: l Superior switching performance l Low on resistance(Rdson≤0.7Ω) l Low gate charge (Typical Data:27.8nC) l Low reverse transfer capacitances(Typical:27pF) l 100% Single pulse avalanche energy test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse.


HPA650R900DN HPA650R700DN HPA650R600SA


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)