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BD539A Dataheets PDF



Part Number BD539A
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description NPN SILICON POWER TRANSISTORS
Datasheet BD539A DatasheetBD539A Datasheet (PDF)

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD540 Series 45 W at 25°C Case Temperature 5 A Continuous Collector Current Up to 120 V VCEO rating B C E TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD539 BD539A Co.

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BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD540 Series 45 W at 25°C Case Temperature 5 A Continuous Collector Current Up to 120 V VCEO rating B C E TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD539 BD539A Collector-base voltage BD539B BD539C BD539D BD539 BD539A Collector-emitter voltage (see Note 1) BD539B BD539C BD539D Emitter-base voltage Continuous collector current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VALUE 40 60 80 100 120 40 60 80 100 120 5 5 45 2 -65 to +150 -65 to +150 -65 to +150 260 V A W W °C °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS BD539 V (BR)CEO Collector-emitter breakdown voltage BD539A IC = 30 mA (see Note 4) VCE = 40 V ICES Collector-emitter cut-off current V CE = 60 V V CE = 80 V V CE = 100 V V CE = 120 V ICEO Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = 30 V V CE = 60 V V CE = 90 V VEB = VCE = V CE = V CE = 5V 4V 4V 4V VBE = 0 V BE = 0 V BE = 0 V BE = 0 V BE = 0 IB = 0 IB = 0 IB = 0 IC = 0 IC = 0.5 A IC = IC = IC = IC = IC = IC = 1A 3A 1A 3A 5A 3A (see Notes 4 and 5) f = 1 kHz f = 1 MHz 20 3 (see Notes 4 and 5) (see Notes 4 and 5) 40 30 12 0.25 0.8 1.5 1.25 V V IB = 0 BD539B BD539C BD539D BD539 BD539A BD539B BD539C BD539D BD539/539A BD539B/539C BD539D MIN 40 60 80 100 120 0.2 0.2 0.2 0.2 0.2 0.3 0.3 0.3 1 mA mA mA V TYP MAX UNIT IEBO hFE IB = 125 mA IB = 375 mA IB = VCE = 1A 4V VCE(sat) VBE(on) hfe VCE = 10 V VCE = 10 V IC = 0.5 A IC = 0.5 A |hfe| NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts.


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