Power MOSFET. CS10J65A0-G Datasheet

CS10J65A0-G MOSFET. Datasheet pdf. Equivalent

Part CS10J65A0-G
Description Silicon N-Channel Power MOSFET
Feature Silicon N-Channel Power MOSFET CS10J65 A0-G ○R General Description: CS10J65 A0-G, the silicon N-ch.
Manufacture HUAJING MICROELECTRONICS
Datasheet
Download CS10J65A0-G Datasheet

Silicon N-Channel Power MOSFET CS10J65 A0-G ○R General Des CS10J65A0-G Datasheet
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CS10J65A0-G
Silicon N-Channel Power MOSFET
CS10J65 A0-G
R
General Description
CS10J65 A0-G, the silicon N-channel Enhanced MOSFETs, is
obtained by the super junction technology which reduces the conduction
loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system
VDSS
ID
PD(TC=25)
RDS(ON)max
650
10
105
0.62
miniaturization and higher efficiency.The package type is TO-263, which accords with the RoHS standard.
V
A
W
Features
l Fast Switching
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
l Halogen Free
Applications
l Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
PD
TJTstg
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
Rating
650
10
30
±30
50
105
55+150
Units
V
A
A
V
mJ
W
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 16V0 1



CS10J65A0-G
CS10J65 A0-G
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
VDS = 650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
Test Conditions
RDS(ON)
VGS(TH)
Drain-to-Source On-Resistance
Gate Threshold Voltage
VGS=10V,ID=3A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V VDS =25V
f = 1.0MHz
Resistive Switching Characteristics
Symbol
Parameter
Test Conditions
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
ID =10 A VDD = 325V
RG =10
ID =10 A VDD =325V
VGS = 10V
R
Rating
Min. Typ. Max.
650 -- --
-- -- 1
-- -- 100
Units
V
µA
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 0.54 0.62
2.5 4
Units
V
Rating
Units
Min. Typ. Max
-- 600 --
-- 460 -- pF
-- 2.6 --
Rating
Min. Typ. Max.
-- 15
-- 28
-- 32
-- 18
-- 12 --
-- 2.4 --
-- 4.2 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 16V0 1





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