BT25T120CKR

Silicon FS Trench IGBT BT25T120 CKR ○R General Description： Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot (TC=25℃) VCE(SAT) 1200 V 25 A 312 W 1.95 V Features： l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ =1.95V @ IC =25A and TC = 25°C l Extremely enhanced avalanche capability Applications： Power switch circuit of induction cooker(IH). Absolute Maximum Ratings （Tc= 25℃ unless otherwise specified）： Symbol Parameter VCES Collector-Emitter Voltage VGES Gate- Emitter Voltage IC ICMa1 IF IFM PD Collector Current Collector Current @TC = 100 °C Pulsed Collector Current Diode Continuous Forward Current @TC = 100 °C Diode Maximum Forward Current Power Dissipation @ TC = 25°C Power Dissipation @TC = 100 °C TJ，Tstg...