Document
High-accuracy detection voltage Low current consumption
VOL T AGE DETECTOR IC with adjustable delay time
BD52XXG BD53XXG
5 4
1pin : RESET output 2pin : Supply voltage 3pin : GND 4pin : N.C. 5pin : CT
BD52XXG/FVE series BD53XXG/FVE series
Description BD52XXG/FVE, BD53XXG/FVE are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 152 types with delay time circuit have developed in addition to well-reputed 152 types of VOLTAGE DETECTOR ICs. Any delay time can be established by using small capacitor due to high-resistance process technology. Total 152 types of VOLTAGE DETECTOR ICs including BD52XXG/FVE series (Nch open drain output) and BD53XXG/ FVE series (CMOS output), each of which has 38 kinds in every 0.1V step (2.3~6.0V) have developed. Features 1) Detection voltage: 0.1V step line-up 2.3~6.0V (Typ.) 2) High-accuracy detection voltage:±1.5% (Max.) 3) Ultra low current consumption: 0.95µA (Typ.) 4) Nch open drain output (BD52XXG/FVE series), CMOS output (BD53XXG/FVE series) 5) Small VSOF5(EMP5), SSOP5(SMP5C2) package Applications Every kind of appliances with microcontroller and logic circuit Application Circuit
BD52XXG/FVE
VDD VDD VDD VDD
1
2
3
(UNIT:mm)
2.9±0.2 (5) (4) 2.8±0.2 1.6 +0.2 –0.1
(1) (2) (3) 1.25MAX 1.1± 0.05±0.05 0.05
0.95
0.42 +0.05 –0.04
0.1
SSOP5(SMP5C2)
BD53XXFVE BD53XXFVE 5
1 2
4
3
1.6±0.05 1.0±0.05 5 4
1pin : RESET output 2pin : SUB Connect to GND 3pin : CT 4pin : GND 5pin : Supply voltage
0.2MAX 0.13±0.05
0.08
M
1.6±0.05 1.2±0.05
1
2
3 Lot No.
0.6MAX
0.5
0.22±0.05
VSOF5(EMP5)
BD53XXG/FVE
VDD
Vout
Reset Vout Reset
Vref
Vref
GND
CT
GND
CT
Pin No. SSOP5(SMP5C2) VSOF5(EMP5)
1 Vout Vout
2 VDD SUB
3 GND CT
4 NC. GND
5 CT VDD
0.2MIN 0.13 +0.05 –0.03
Absolute Maximum Ratings (Ta=25˚C)
Parameter Power supply voltage Output voltage Nch open drain output
CMOS output
Symbol VDD – GND VOUT VCT Pd Pd Topr Tstg
Input voltage of CT Power dissipation:SSOP5(SMP5C2) *1 Power dissipation:VSOF5(EMP5) *2 Operating temperature range Storage temperature range
Limits – 0.3 ~ + 10 GND – 0.3 ~ + 10 GND – 0.3 ~ VDD + 0.3 GND – 0.3 ~ VDD + 0.3 540 210 – 40 ~ + 85 – 55 ~ + 125
Unit V V V
mW mW ˚C ˚C
*1 Derating: 5.4mW/˚C for operation above Ta=25˚C.(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.) *2 Derating: 2.1mW/˚C for operation above Ta=25˚C.(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.)
Electrical characteristics (Unless otherwise noted; Ta=-25~85˚C)
Parameter
Detection voltage temperature coefficient
*1
Symbol
Min. —
Typ. ±100 VsX0.05 0.80 0.85 0.90 0.95 0.75 0.80 0.85 0.90 — 1.2 5.0 1.4 1.8 2.2 — VDDX0.4 VDDX0.45 VDDX0.5 VDDX0.5 9 40 240
Max.
Unit
Conditions H L VDET=2.3~3.1V VDET=3.2~4.2V VDD=VDET–0.2V VDET=4.3~5.2V VDET=5.3~6.0V VDET=2.3~3.1V VDET=3.2~4.2V VDD=VDET+2V VDET=4.3~5.2V VDET=5.3~6.0V RL=470kΩ, VOL ≥0.4V VDS=0.5V, VDD=1.2V VDS=0.5V, VDD=2.4V (VDET≥2.7V) VDS=0.5V, VDD=4.8V VDET=2.3~4.2V VDS=0.5V, VDD=6.0V VDET=4.3~5.2V VDS=0.5V, VDD=8.0V VDET=5.3~6.0V VDD=VDS=10V VDET=2.3~2.6V VDET=2.7~4.2V VDD=VDETX1.1 VDET=4.3~5.2V VDET=5.3~6.0V VDD=VDETX1.1 VCT=0.1V,VDD=0.95V VCT=0.5V,VDD=1.5V RL=470kΩ, VDD=L
Hysteresis voltage Circuit current when ON
Circuit current when OFF Min. operating voltage "L" output current "H" output current Output leak current
*1
CT pin Threshold voltage Output delay resistance *1 CT pin output current
*1
VDET/∆T ∆VDET VsX0.03 — — Icc1 — — — — Icc2 — — VOPL 0.95 0.4 IOL 2.0 0.7 IOH 0.9 1.1 Ileak — VDDX0.3 VCTH VDDX0.3 VDDX0.35 VDDX0.4 RCT 5.5 15 ICT 150
±360 ppm/ ˚C VsX0.08 % 2.40 2.55 µA 2.70 2.85 2.25 2.40 µA 2.55 2.70 — V — mA — — mA — — 0.1 µA VDDX0.6 VDDX0.6 V VDDX0.6 VDDX0.6 12.5 MΩ — µA —
*1 This value is guranteed at Ta=25˚C. *2 TPLH : VDD=(VDET typ.–0.5V) (VDET typ.+0.5V). Note) RL is not necessary for CMOS output type. Note) Please refer to the detection voltage of Line-up table.
Characteristic diagram and Measurement circuit
10 1
Output delay time "L
[BD5242G/FVE]
H"
40.00 35.00 30.00
Output delay time "H
L"
[BD5242G/FVE]
delay time[s]
delay time[µs]
0.1 0.01 0.001 0.0001 0.00001 0.000001 0.0001 0.001 0.01 0.1 1
25.00 20.00 15.00 10.00 5.00 0.00 0.0001 0.0010 0.0100 0.1000 1.0000
CT Capacitance [µF]
5V RL=100kΩ VOUT GND 100pF VDET 0.5V
CT Capacitance[µF]
5V RL=100kΩ VOUT GND 100pF
VDD CT VDET 0.5V
VDD CT
Circuit current
[BD5242G/FVE]
1.5
18
"L" output current
[BD5242G/FVE]
45 40
"H" output current
[BD5342G/FVE]
15 35 30 IOL [mA] IOH [mA]
1.0 IDD [µA]
10
VDD=2.4V
25 20 15 10
V VDD=8.0
VDD=6.0V
0.5
5
VDD=4.8V VDD=1.2V 0 1 2 3 4 5 VDD[V] 6 7 8 9 10 0 0.5 1 VDS [V] 1.5 2 2.5 5 0 1 2 3 VDS [V] 4 5 6
A
VDD VDD CT GND VOUT VDD CT GND VDD VOUT VDD CT GND VDS VDD VOUT
VDS
A
A
I/O characteristic
9 8 7 6 4.6 VOUT [V] VDET [V] 5 4 3 2 1 0 0.5 Ta=25˚C 3.4 Ta=25˚C 1 1.5 2 2.5 3 VDD [V] 3.5 4 4.5 5 5.5 -40
Detection voltage
5.4
Timing waveform
VDD
VDD VDET+∆VDET VDET
[BD5242G/FVE]
[BD5242G/FVE]
5.0
low to high.