P-Channel MOSFET. ME6987-G Datasheet

ME6987-G MOSFET. Datasheet pdf. Equivalent

Part ME6987-G
Description Dual P-Channel MOSFET
Feature Dual P-Channel 20V (D-S) MOSFET MOSFET GENERAL DESCRIPTION The ME6987-G is the Dual P-Channel logic .
Manufacture Matsuki
Datasheet
Download ME6987-G Datasheet

Dual P-Channel 20V (D-S) MOSFET MOSFET GENERAL DESCRIPTION T ME6987-G Datasheet
Recommendation Recommendation Datasheet ME6987-G Datasheet




ME6987-G
Dual P-Channel 20V (D-S) MOSFET
MOSFET
GENERAL DESCRIPTION
The ME6987-G is the Dual P-Channel logic enhancement mode
power field effect transistors are produced using high cell density,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TSSOP-8)
Top View
ME6987-G
FEATURES
RDS(ON)31mΩ@VGS=-4.5V
RDS(ON)43mΩ@VGS=-2.5V
RDS(ON)63mΩ@VGS=-1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
* Th Ordering Information: ME6987 -G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
Maximum Ratings
-20
±12
-5
-4
-20
1.3
0.8
-55 to 150
100
Unit
V
V
A
A
W
/W
*The device mounted on 1in2 FR4 board with 2 oz copper
DCC
正式發行
Jun, 2016-Ver1.0
01



ME6987-G
ME6987-G
Dual P-Channel 20V (D-S) MOSFET
MOSFET
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
V(BR)DSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
-20
-0.3
V
-1 V
IGSS Gate Leakage Current
VDS=0V, VGS=±12V
IDSS
Zero Gate Voltage Drain Current
VDS=-20V, VGS=0V
±100
-1
nA
μA
RDS(ON)
Drain-Source On-Resistance
VGS=-4.5V, ID= -4.5A
VGS=-2.5V, ID= -3A
24 31
31 43 mΩ
VGS=-1.8V, ID= -2A
45 63
VSD Diode Forward Voltage
IS=-0.5A, VGS=0V
-0.62 -1
V
DYNAMIC
Qg Total Gate Charge
14.8
Qgs Gate-Source Charge
VDS=-10V, VGS=-4.5V, ID=-4.5A
2.3
nC
Qgd Gate-Drain Charge
4.3
Ciss Input Capacitance
1107
Coss
Output Capacitance
VDS=-10V, VGS=0V,f=1MHz
139 pF
Crss Reverse Transfer Capacitance
136
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=-10V, RL =10Ω
RG=6Ω,VGS=-4.5V
ID=-1A
Notes: a. Pulse test; pulse width 300us, duty cycle2%
61.5
37
ns
113
41
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Jun, 2016-Ver1.0
DCC
正式發行
02





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