N-Channel MOSFET. ME6970D-G Datasheet

ME6970D-G MOSFET. Datasheet pdf. Equivalent

Part ME6970D-G
Description Dual N-Channel MOSFET
Feature Dual N-Channel 20-V (D-S) MOSFET ME6970D/ME6970D-G GENERAL DESCRIPTION The ME6970D Dual N-Channel .
Manufacture Matsuki
Datasheet
Download ME6970D-G Datasheet

Dual N-Channel 20-V (D-S) MOSFET ME6970D/ME6970D-G GENERAL ME6970D-G Datasheet
Recommendation Recommendation Datasheet ME6970D-G Datasheet




ME6970D-G
Dual N-Channel 20-V (D-S) MOSFET
ME6970D/ME6970D-G
GENERAL DESCRIPTION
The ME6970D Dual N-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(TSSOP-8)
Top View
FEATURES
RDS(ON)22m@VGS=4.5V
RDS(ON)23m@VGS=4.0V
RDS(ON)26m@VGS=3.0V
RDS(ON)29m@VGS=2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
DSC
e Ordering Information: ME6970D (Pb-free)
ME6970D-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25
Current(TJ=150)
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
* The device mounted on 1in2 FR4 board with 2 oz copper
Maximum
20
±12
6.3
5.0
25
1.3
0.8
-55 to 150
100
Unit
V
V
A
A
W
℃/W
DCC
正式發行
Aug, 2011-Ver1.3
01



ME6970D-G
Dual N-Channel 20-V (D-S) MOSFET
ME6970D/ME6970D-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
BVDSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Limit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±8V
VDS=20V, VGS=0V
VGS=4.5V, ID= 7A
Min Typ Max Unit
20 V
0.5 1.0 V
±10 μA
1 μA
15.5
22
RDS(ON)
Drain-Source On-State Resistance a
VGS=4V, ID= 6.8A
VGS=3V, ID= 6.3A
16 23
mΩ
18 26
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss
td(on)
tr
td(off)
tf
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS=2.5V, ID= 6.0A
IS=7A, VGS=0V
VDS=10V, VGS=10V, ID=6.5A
VDS=10V, VGS=4.5V, ID=6.5A
VDS=15V, VGS=0V,f=1MHz
VDD=10V, RL =10Ω
ID=1A, VGEN=4.5V
RG=6Ω
20 29
1.2 V
24
12
1.9
3.7
360
100
31
311
441
4130
1440
nC
pF
ns
Notes: a. pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Aug, 2011-Ver1.3
DCC
正式發行
02





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