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ME6970-G

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Dual N-Channel MOSFET


Description
Dual N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION The ME6970 Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular ...



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ME6970-G

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