N-Channel MOSFET. ME7900EN Datasheet

ME7900EN MOSFET. Datasheet pdf. Equivalent


Part ME7900EN
Description N-Channel MOSFET
Feature .
Manufacture Matsuki
Datasheet
Download ME7900EN Datasheet

ME7900EN Datasheet
ME7900EN-G Datasheet
Recommendation Recommendation Datasheet ME7900EN Datasheet




ME7900EN
ME7900EN/ME7900EN-G
N-Channel 20-V(D-S) MOSFET , ESD Protection
GENERAL DESCRIPTION
The ME7900EN is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology . This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
(DFN 3x3 NEP)
Top View
FEATURES
RDS(ON)22mΩ@VGS=4.5V
RDS(ON)23mΩ@VGS=4V
RDS(ON)25mΩ@VGS=3.1V
RDS(ON)30mΩ@VGS=2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Battery Powered System
DC/DC Converter low side switching
Load Switch
Th Ordering Information: ME7900EN (Pb-free)
ME7900EN-G (Green product- Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
Maximum Ratings
20
±12
8.3
6.6
33
2.4
1.5
-55 to 150
52
The * * The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
/W
DCC
正式發行
May, 2014-Ver1.0
01



ME7900EN
ME7900EN/ME7900EN-G
N-Channel 20-V(D-S) MOSFET , ESD Protection
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
BVDSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistance a
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss
Input capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±8V
VDS=20V, VGS=0V
VGS=4.5V, ID= 4A
VGS=4V, ID= 4A
VGS=3.1V, ID=4A
VGS=2.5V, ID=2A
IS=6.5A, VGS=0V
20
0.5
17
18
19
22
0.8
V
1.2 V
±10 μA
1 μA
22
23 mΩ
25
30
1.2 V
VDS=10V, VGS=4.5V, ID=6.5A
VDS=15V, VGS=0V, f=1.0MHz
VDS=10V,VGS=4.5V
RG=6Ω, RL=10Ω
ID=1.0A
11
1.9
3
330
100
31
300
472
4570
1510
nC
pF
ns
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
May, 2014-Ver1.0
DCC
正式發行
02





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