P-Channel MOSFET. ME5937ED Datasheet

ME5937ED MOSFET. Datasheet pdf. Equivalent

Part ME5937ED
Description Dual P-Channel MOSFET
Feature ME5937ED/ ME5937ED-G Dual P-Channel 12-V (D-S) MOSFET,ESD Protected GENERAL DESCRIPTION The ME5937E.
Manufacture Matsuki
Datasheet
Download ME5937ED Datasheet

ME5937ED/ ME5937ED-G Dual P-Channel 12-V (D-S) MOSFETESD Pro ME5937ED Datasheet
ME5937ED/ ME5937ED-G Dual P-Channel 12-V (D-S) MOSFETESD Pro ME5937ED-G Datasheet
Recommendation Recommendation Datasheet ME5937ED Datasheet




ME5937ED
ME5937ED/ ME5937ED-G
Dual P-Channel 12-V (D-S) MOSFETESD Protected
GENERAL DESCRIPTION
The ME5937ED is the Dual P-Channel logic enhancement mode
power field effect transistors, using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance.These devices are particularly suited for
low voltage application such as cellular phone, notebook computer
power management and other battery powered circuits, and lower
power loss that are needed in a very small outline surface mount
package.
PIN CONFIGURATION
(DFN 2x3 NEP)
Top Vie w
FEATURES
RDS(ON)62mΩ@VGS=-4.5V
RDS(ON)77mΩ@VGS=-2.5V
RDS(ON)110mΩ@VGS=-1.8V
RDS(ON)180mΩ@VGS=-1.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
* The Ordering Information: ME5937ED (Pb-free)
ME5937ED-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=25
Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance*
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
Maximum Ratings
-12
±8
-3.3
-2.7
-13.5
1.1
0.7
-55 to 150
110
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
/W
DCC
正式發行
Dec, 2014-Ver1.0
01



ME5937ED
ME5937ED/ ME5937ED-G
Dual P-Channel 12-V (D-S) MOSFETESD Protected
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol
STATIC
BVDSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Limit
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VDS=0V, VGS=±8V
VDS=-12V, VGS=0V
VGS=-4.5V, ID= -2.5A
Min Typ Max Unit
-12
-0.3
40
V
-1.0 V
±10 μA
-1 μA
62
RDS(ON)
Drain-Source On-State Resistancea
VGS=-2.5V, ID= -1.2A
VGS=-1.8V, ID= -1.2A
48 77
60 110
VGS=-1.5V, ID= -0.5A
78 180
VsD Diode Forward Voltage
Is=-2.5A, VGS=0V,
-1.2
DYNAMIC
Ciss Input capacitance
170
Coss
Output Capacitance
VDS=-6V, VGS=0V, f=1.0MHz
122
Crss
Reverse Transfer Capacitance
14
Qg Total Gate Charge
13
Qgs Gate-Source Charge
VDS=-6V, VGS=-4.5V, ID=-2.5A
1.1
Qgd Gate-Drain Charge
2.4
td(on)
tr
td(off)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDS=-10V, RL =2.5Ω
RGEN=3Ω, VGS=-4.5V
560
4000
400
tf Turn-Off Fall Time
4000
Notes: a. Pulse test; pulse width 300us, duty cycle2%
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
mΩ
V
pF
nC
ns
Dec, 2014-Ver1.0
DCC
正式發行
02





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