N-Channel MOSFET. ME7170-G Datasheet

ME7170-G MOSFET. Datasheet pdf. Equivalent

Part ME7170-G
Description N-Channel MOSFET
Feature N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7170-G is the N-Channel logic enhanc.
Manufacture Matsuki
Datasheet
Download ME7170-G Datasheet

N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION Th ME7170-G Datasheet
Recommendation Recommendation Datasheet ME7170-G Datasheet




ME7170-G
N-Channel 30V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7170-G is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as notebook computer power
management and other battery powered circuits where Low-side
switching , and low in-line power loss are needed in a very small
outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6
Top View
ME7170-G
FEATURES
RDS(ON)2.6mΩ@VGS=10V
RDS(ON)3.9mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
NB/MB Vcore Low side switching
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
* The Ordering Information: ME7170-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Junction and Storage Temperature Range
Thermal Resistance-Junction to Case*
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJC
*The device mounted on 1in2 FR4 board with 2 oz copper
Maximum Ratings
30
±20
110
90
450
56
36
-55 to 150
2.2
Unit
V
V
A
A
W
/W
DCC
正式發行
July, 2017-Ver2.5
01



ME7170-G
N-Channel 30V(D-S) Enhancement MOSFET
ME7170-G
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=10V, ID=25A
VGS=4.5V, ID=19A
IS=25A, VGS=0V
30 V
1 2.2 V
±100
1
nA
μA
2.1 2.6
mΩ
3 3.9
0.8 1.2
V
VDS=15V, VGS=10V, ID=20A
VDS=15V, VGS=4.5V, ID=20A
VDS=15V, VGS=0V,F=1MHz
VDS=15V, RL =15Ω
VGS=10V,RG=6Ω
ID=1A
102
49
16
22
5024
514
445
33
21
140
31
nC
nC
pF
ns
Note: a.Pulse test: pulse width300us, duty cycle2
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
July, 2017-Ver2.5
DCC
正式發行
02





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