N-Channel MOSFET. ME7114AS Datasheet

ME7114AS MOSFET. Datasheet pdf. Equivalent

Part ME7114AS
Description N-Channel MOSFET
Feature N-Channel 30V(D-S) MOSFET ME7114AS/ME7114AS-G GENERAL DESCRIPTION The ME7114AS is the N-Channel lo.
Manufacture Matsuki
Datasheet
Download ME7114AS Datasheet

N-Channel 30V(D-S) MOSFET ME7114AS/ME7114AS-G GENERAL DESC ME7114AS Datasheet
N-Channel 30V(D-S) MOSFET ME7114AS/ME7114AS-G GENERAL DESC ME7114AS-G Datasheet
Recommendation Recommendation Datasheet ME7114AS Datasheet




ME7114AS
N-Channel 30V(D-S) MOSFET
ME7114AS/ME7114AS-G
GENERAL DESCRIPTION
The ME7114AS is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where Low-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
(DFN(S) 3.3x3.3)
Top View
FEATURES
RDS(ON)7m@VGS=10V
RDS(ON)10.5m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
Ordering Information: ME7114AS(Pb-free)
ME7114AS-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
Maximum Ratings
30
±20
18.4
14.7
74
3.8
2.4
-55 to 150
33
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃/W
DCC
正式發行
Nov, 2012-Ver1.0
01



ME7114AS
N-Channel 30V(D-S) MOSFET
ME7114AS/ME7114AS-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
JuneR, 2DS0(0O6N-)Ver2.0Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg
td(on)
tr
td(off)
tf
Gate-Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=10V, ID=13A
VGS=4.5V, ID=10A
IS=2.8A, VGS=0V
30 V
1.0 3.0 V
±100 nA
1 μA
5.8 7
mΩ
8.5 10.5
0.75 1.1
V
VDS=15V, VGS=10V, ID=25A
VDS=15V, VGS=4.5V, ID=25A
VDS=15V, VGS=0V,
F=1MHz
VDS=0V, VGS=0V, F=1MHz
VDD=15V, RL =15Ω
ID=1A, VGEN=10V
RG=3Ω
44.4
22.3
8.78
11.5
2370
325
284
1.15
21.8
16.2
67.3
10.4
nC
pF
Ω
ns
Note: a.Pulse test: pulse width300us, duty cycle2
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Nov, 2012-Ver1.0
DCC
正式發行
02





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