N-Channel MOSFET. ME7114S-G Datasheet

ME7114S-G MOSFET. Datasheet pdf. Equivalent


Part ME7114S-G
Description N-Channel MOSFET
Feature N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7114S is the N-Channel logic enhance.
Manufacture Matsuki
Datasheet
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N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION Th ME7114S-G Datasheet
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ME7114S-G
N-Channel 30V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7114S is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where Low-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
(DFN 3.3x3.3)
Top View
ME7114S-G
FEATURES
RDS(ON)7m@VGS=10V
RDS(ON)10.5m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
e Ordering Information: ME7114S-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
TC=25
Continuous Drain
Current(Tj=150)*
TC=70
TA=25
TA=70
Pulsed Drain Current
TC=25
Maximum Power Dissipation*
TC=70
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
RθJC
Maximum Ratings
Unit
30 V
±20 V
71
57
A
18.4
14.7
74 A
52
33
W
3.8
2.4
-55 to 150
Typ 26 Max
Typ 1.9 Max
33 DC/WC
2.4 正式發行
Dec, 2011-Ver2.0
01



ME7114S-G
N-Channel 30V(D-S) Enhancement MOSFET
ME7114S-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
JuneR, 2DS0(0O6N-)Ver2.0Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg
td(on)
tr
td(off)
tf
Gate-Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=10V, ID=13A
VGS=4.5V, ID=10A
IS=2.8A, VGS=0V
30 V
1.0 3.0 V
±100 nA
1 μA
5.8 7
mΩ
8.5 10.5
0.75 1.1
V
VDS=15V, VGS=10V, ID=13A
VDS=15V, VGS=4.5V, ID=13A
VDS=15V, VGS=0V,
F=1MHz
VDS=0V, VGS=0V, F=1MHz
VDD=15V, RL =15Ω
ID=1A, VGEN=10V
RG=6Ω
37
18
7.7
8.8
1690
260
84
0.9
20
16
63
11
nC
pF
Ω
ns
Note: a. Pulse test: pulse width300us, duty cycle2
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Dec, 2011-Ver2.0
DCC
正式發行
02





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