N-Channel MOSFET. ME7814S-G Datasheet

ME7814S-G MOSFET. Datasheet pdf. Equivalent

Part ME7814S-G
Description N-Channel MOSFET
Feature N-Channel 30V (D-S) MOSFET ME7814S/ME7814S-G GENERAL DESCRIPTION The ME7814S-G is the N-Channel lo.
Manufacture Matsuki
Datasheet
Download ME7814S-G Datasheet

N-Channel 30V (D-S) MOSFET ME7814S/ME7814S-G GENERAL DESCR ME7814S-G Datasheet
Recommendation Recommendation Datasheet ME7814S-G Datasheet




ME7814S-G
N-Channel 30V (D-S) MOSFET
ME7814S/ME7814S-G
GENERAL DESCRIPTION
The ME7814S-G is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where Low-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
(DFN(S) 3.3x3.3)
Top View
FEATURES
RDS(ON)3.6mΩ@VGS=10V
RDS(ON)5.1mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
Ordering Information: ME7814S (Pb-free)
ME7814S-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Drain-Source Voltage
VDS 30
Gate-Source Voltage
Continuous Drain Current*
TA=25
TA=70
VGS
ID
±20
25.6
20.5
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
IDM
PD
102
3.7
2.4
Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Thermal Resistance-Junction to Ambient*
RθJA
33
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
/W
July, 2017-Ver1.1
DCC
正式發行
01



ME7814S-G
N-Channel 30V (D-S) MOSFET
ME7814S/ME7814S-G
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol Parameter
Limit
STATIC
Min Typ Max Unit
V(BR)DSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
30
1.3
2.2
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
±100
IDSS Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
1
RDS(ON)
Drain-Source On-State Resistancea
VGS=10V, ID=30A
VGS=4.5V, ID=30A
2.9 3.6
4.1 5.1
VSD Diode Forward Voltage
IS=10A, VGS=0V
0.77 1.1
DYNAMIC
Qg Total Gate Charge
VDS=15V, VGS=10V, ID=30A
74
Qg Total Gate Charge
35.6
Qgs Gate-Source Charge
VDS=15V, VGS=4.5V, ID=30A
15.1
Qgd Gate-Drain Charge
17.5
Ciss Input Capacitance
3906
Coss
Output Capacitance
VDS=15V, VGS=0V, F=1MHz
434
Crss Reverse Transfer Capacitance
374
td(on)
Turn-On Delay Time
22.4
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDD=15V, RL =15Ω
VGEN=10V, RG=3Ω
19.1
81.3
tf Turn-Off Fall Time
13.7
Note: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
V
V
nA
μA
mΩ
V
nC
pF
ns
July, 2017-Ver1.1
DCC
正式發行
02





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