ME7814S-G

N-Channel 30V (D-S) MOSFET ME7814S/ME7814S-G GENERAL DESCRIPTION The ME7814S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN(S) 3.3x3.3) Top View FEATURES ● RDS(ON)≦3.6mΩ@VGS=10V ● RDS(ON)≦5.1mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch Ordering Information: ME7814S (Pb-free) ME7814S-G (Green product-Halogen free) Absolut...