N-Channel MOSFET. ME7812S-G Datasheet

ME7812S-G MOSFET. Datasheet pdf. Equivalent


Part ME7812S-G
Description N-Channel MOSFET
Feature ME7812S-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME7812S N-C.
Manufacture Matsuki
Datasheet
Download ME7812S-G Datasheet


ME7812S-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Di ME7812S-G Datasheet
Recommendation Recommendation Datasheet ME7812S-G Datasheet




ME7812S-G
ME7812S-G
N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode
GENERAL DESCRIPTION
The ME7812S N-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
FEATURES
RDS(ON) 8.5m@VGS=10V
RDS(ON) 17.5m@VGS=4.5V
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
DSC
PIN CONFIGURATION
(DFN 3.3x3.3)
Top View
e Ordering Information: ME7812S-G (Green product-Halogen free)
Absolute Maximum Ratings (Tj=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
Maximum Ratings
30
±20
15.2
12.1
61
3.1
2.0
-55 to 150
40
Unit
V
V
A
A
W
℃/W
DCC
正式發行
Dec, 2011-Ver2.0
01



ME7812S-G
ME7812S-G
N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
BVDSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistance a
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Limit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=10V, ID= 13.5A
VGS=4.5V, ID= 11A
IS=1.0A, VGS=0V
Min Typ Max Unit
30 V
1 3V
±100
100
nA
μA
7
13.5
8.5
17.5
mΩ
0.45 0.55 V
VDS=15V,VGS=10V, ID=13.5A
VDS=15V,VGS=4.5V, ID=13.5A
VDS=15V, VGS=0V,f=1MHz
VDS=15V, RL =15Ω
RGEN=3Ω, VGS=10V
28
14
6.5
7.5
1260
527
121
17
14
47
6
nC
pF
ns
Note: a. Pulse test: pulse width300us, duty cycle2
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Dec, 2011-Ver2.0
DCC
正式發行
02







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