ME7802S-G

N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME7802S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN 3.3x3.3) Top View ME7802S-G FEATURES RDS(ON) mΩ@VGS=10V RDS(ON) mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Portable Equipment Battery Powered System DC/DC Converter Load Switch Ordering Information: ME7802S-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Drai...