N-Channel MOSFET. ME7802-G Datasheet

ME7802-G MOSFET. Datasheet pdf. Equivalent

Part ME7802-G
Description N-Channel MOSFET
Feature N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME7802-G is the N-Channel logic enhancement mode .
Manufacture Matsuki
Datasheet
Download ME7802-G Datasheet

N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME7802-G ME7802-G Datasheet
Recommendation Recommendation Datasheet ME7802-G Datasheet




ME7802-G
N-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME7802-G is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where Low-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
(DFN 3.3x3.3)
Top View
ME7802-G
FEATURES
RDS(ON)
m@VGS=10V
RDS(ON)
m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
e Ordering Information: ME7802-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
TC=25
Continuous Drain Current*
TC=70
TA=25
TA=70
Pulsed Drain Current
TC=25
Maximum Power Dissipation*
TC=70
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
RθJC
Steady State
Unit
30 V
±20 V
84
67
A
22.7
18.2
91 A
52
33
W
3.8
2.4
-55 to 150
Typ 26 Max
Typ 1.9 Max
33 D C C
2.4 正式發行
Sep, 2010-Ver1.0
01



ME7802-G
N-Channel 30V (D-S) MOSFET
ME7802-G
Electrical Characteristics (TA =25 Unless Otherwise Specified)
Symbol
STATIC
Parameter
Limit
Min Typ Max Unit
V(BR)DSS
VGS(th)
IGSS
IDSS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistancea
VSD Diode Forward Voltage
VGS=0V, ID=250 A
VDS=VGS, ID=250 A
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=10V, ID=20A
VGS=4.5V, ID=16A
IS=1.0A, VGS=0V
30 V
1.0 3.0 V
±100 nA
1A
3.7 4.6
m
5.4 6.8
0.7 1.2
V
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate-Resistance
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
VDS=15V, VGS=10V, ID=20A
VDS=15V, VGS=4.5V, ID=20A
VDS=15V, VGS=0V, F=1MHz
VDS=0V, VGS=0V, F=1MHz
VDD=15V, RL =15
VGEN=10V, RG=3
54
27
9.5
11
2450
393
129
1.8
23
16
7
12
nC
pF
ns
Note: a. Pulse test: pulse width 300us, duty cycle 2%, Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
Sep, 2010-Ver1.0
DCC
正式發行
02





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