N-Channel MOSFET. ME7890ED Datasheet

ME7890ED MOSFET. Datasheet pdf. Equivalent

Part ME7890ED
Description N-Channel MOSFET
Feature ME7890ED/ME7890ED-G N-Channel 30V (D-S) MOSFET, ESD Protected GENERAL DESCRIPTION The ME7890ED-G is.
Manufacture Matsuki
Datasheet
Download ME7890ED Datasheet

ME7890ED/ME7890ED-G N-Channel 30V (D-S) MOSFET, ESD Protecte ME7890ED Datasheet
ME7890ED/ME7890ED-G N-Channel 30V (D-S) MOSFET, ESD Protecte ME7890ED-G Datasheet
Recommendation Recommendation Datasheet ME7890ED Datasheet




ME7890ED
ME7890ED/ME7890ED-G
N-Channel 30V (D-S) MOSFET, ESD Protected
GENERAL DESCRIPTION
The ME7890ED-G is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where Low-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
(DFN(S) 3.3x3.3)
Top View
FEATURES
RDS(ON)4.6mΩ@VGS=10V
RDS(ON)7.8mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
Ordering Information: ME7890ED (Pb-free)
ME7890ED-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Drain-Source Voltage
VDS 30
Gate-Source Voltage
Continuous Drain Current*
TA=25
TA=70
VGS
ID
±20
22.7
18.2
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
IDM
PD
90
3.8
2.4
Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Thermal Resistance-Junction to Ambient*
RθJA
33
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
/W
Dec, 2015-Ver1.1
DCC
正式發行
01



ME7890ED
ME7890ED/ME7890ED-G
N-Channel 30V (D-S) MOSFET, ESD Protected
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
STATIC
Min Typ Max Unit
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
30
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
1.0
3.0
IGSS Gate Leakage Current
VDS=0V, VGS=±16V
±10
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
1
RDS(ON)
Drain-Source On-State Resistancea
VGS=10V, ID=20A
VGS=4.5V, ID=16A
3.8 4.6
6 7.8
VSD Diode Forward Voltage
IS=1.0A, VGS=0V
0.7 1.2
DYNAMIC
Qg Total Gate Charge
VDS=15V, VGS=10V, ID=20A
57.6
Qg Total Gate Charge
28.6
Qgs Gate-Source Charge
VDS=15V, VGS=4.5V, ID=20A
11.2
Qgd Gate-Drain Charge
14.4
Ciss Input Capacitance
2712
Coss
Output Capacitance
VDS=15V, VGS=0V, F=1MHz
339
Crss Reverse Transfer Capacitance
286
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=15V, RL =0.75Ω
VGS=10V, RG=3Ω
ID=20A
22.5
260
54.3
12
Note: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
V
V
μA
μA
mΩ
V
nC
pF
ns
Dec, 2015-Ver1.1
DCC
正式發行
02





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