N-Channel MOSFET. ME7386 Datasheet

ME7386 MOSFET. Datasheet pdf. Equivalent

Part ME7386
Description N-Channel MOSFET
Feature N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7386 is the N-Channel logic enhancem.
Manufacture Matsuki
Datasheet
Download ME7386 Datasheet

N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION Th ME7386 Datasheet
N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION Th ME7386-G Datasheet
Recommendation Recommendation Datasheet ME7386 Datasheet




ME7386
N-Channel 30V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7386 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as notebook computer power
management and other battery powered circuits where Low-side
switching , and low in-line power loss are needed in a very small
outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6
ME7386/ME7386-G
FEATURES
RDS(ON)6.5m@VGS=10V
RDS(ON)11m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
e Ordering Information: ME7386 (Pb-free)
ME7386-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
TC=25
Continuous Drain*
TC=70
TA=25
TA=70
Pulsed Drain Current
TC=25
Maximum Power Dissipation*
TC=70
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
RθJC
Maximum Ratings
30
±20
60
48
16
13
65
37.8
24
2.8
1.8
-55 to 150
Steady State
45
3.3
Unit
V
V
A
A
W
D℃℃C//WWC
正式發行
Aug, 2012-Ver2.3
01



ME7386
N-Channel 30V(D-S) Enhancement MOSFET
ME7386/ME7386-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max
STATIC
V(BR)DSS
VGS(th)
IGSS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
IDSS Zero Gate Voltage Drain Current
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VDS=30V, VGS=0V
TJ=70
30
1.0 3.0
±100
1
10
RDS(ON)
VSD
Drain-Source On-State Resistancea
Diode Forward Voltage
VGS=10V, ID=19A
VGS=4.5V, ID=17A
IS=2.8A, VGS=0V
5.2 6.5
8 11
0.75 1.1
DYNAMIC
Qg Total Gate Charge
19 24
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V, VGS=4.5V, ID=19A
7.5 9.7
9.8 12.7
Ciss Input Capacitance
1630
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
VDS=15V, VGS=0V,F=1MHz
260
80
Rg
td(on)
tr
td(off)
tf
Gate-Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=0V, VGS=0V, F=1MHz
VDD=15V, RL =15Ω
ID=1A, VGEN=10V
RG=6Ω
1.3
18
13
68
10
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
mΩ
V
nC
pF
Ω
ns
Aug, 2012-Ver2.3
DCC
正式發行
02





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