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ME7386-G Dataheets PDF



Part Number ME7386-G
Manufacturers Matsuki
Logo Matsuki
Description N-Channel MOSFET
Datasheet ME7386-G DatasheetME7386-G Datasheet (PDF)

N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7386 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a v.

  ME7386-G   ME7386-G


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N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7386 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION PowerDFN 5x6 ME7386/ME7386-G FEATURES ● RDS(ON)≦6.5mΩ@VGS=10V ● RDS(ON)≦11mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch e Ordering Information: ME7386 (Pb-free) ME7386-G (Green product-Halogen free) Abso.


ME7386 ME7386-G ME7362


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