N-Channel MOSFET. ME7362-G Datasheet

ME7362-G MOSFET. Datasheet pdf. Equivalent

Part ME7362-G
Description N-Channel MOSFET
Feature N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME7362 is the N-Channel logic enhancement mode pow.
Manufacture Matsuki
Datasheet
Download ME7362-G Datasheet

N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME7362 is ME7362-G Datasheet
Recommendation Recommendation Datasheet ME7362-G Datasheet




ME7362-G
N-Channel 30V(D-S) MOSFET
GENERAL DESCRIPTION
The ME7362 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as notebook computer power
management and other battery powered circuits where Low-side
switching , and low in-line power loss are needed in a very small
outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6
Top View
ME7362/ME7362-G
FEATURES
RDS(ON)2.0mΩ@VGS=10V
RDS(ON)3 mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
NB/MB Vcore Low side switching
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
* The Ordering Information: ME7362 (Pb-free)
ME7362-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TC=25
TC=70
Pulsed Drain Current
Maximum Power Dissipation*
TC=25
TC=70
Operating Junction Temperature
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJC
Maximum Ratings
30
±20
115
92
459
38
24
-55 to 150
3.3
Unit
V
V
A
A
W
/W
DCC
正式發行
Jun, 2017-Ver1.4
01



ME7362-G
N-Channel 30V(D-S) MOSFET
ME7362/ME7362-G
Electrical Characteristics (TC=25Unless Otherwise Specified)
Symbol
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate-Resistance
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=10V, ID=30A
VGS=4.5V, ID=28A
IS=2.8A, VGS=0V
30 V
1 2.2 V
±100 nA
1 μA
1.4 2.0
mΩ
2.3 3
0.8 1.2
V
VDS=15V, VGS=10V, ID=27A
VDS=15V, VGS=4.5V, ID=27A
VDS=15V, VGS=0V, F=1MHz
VDS=0V, VGS=0V, F=1MHz
VDD=15V, RL =15Ω
ID=1A, VGEN=10V
RG=6Ω
148
70
25
30
7430
1150
378
0.9
39
25
190
60
nC
pF
Ω
Ns
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Jun, 2017-Ver1.4
DCC
正式發行
02





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)