N-Channel MOSFET. ME7356-G Datasheet

ME7356-G MOSFET. Datasheet pdf. Equivalent

Part ME7356-G
Description N-Channel MOSFET
Feature N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME7356-G is the N-Channel logic enhancement mode .
Manufacture Matsuki
Datasheet
Download ME7356-G Datasheet

N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME7356-G ME7356-G Datasheet
Recommendation Recommendation Datasheet ME7356-G Datasheet




ME7356-G
N-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME7356-G is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where Low-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6
ME7356-G
FEATURES
RDS(ON)5m@VGS=10V
RDS(ON)6.2m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
Ordering Information: ME7356-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TA=25
TA=70
Symbol
VDS
VGS
ID
Maximum Ratings
30
±20
18.6
14.9
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
IDM
PD
75
2.8
1.8
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient*
TJ
Tstg
RθJA
150
-55 to 150
45
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃/W
DCC
正式發行
Aug, 2012-Ver1.1
01



ME7356-G
N-Channel 30V (D-S) MOSFET
ME7356-G
Electrical Characteristics (TA=25Unless Otherwise Specified)
Symbol Parameter
Limit
STATIC
Min Typ Max Unit
V(BR)DSS
VGS(th)
IGSS
IDSS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate-Resistance
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=24V, VGS=0V
VGS=10V, ID=18A
VGS=4.5V, ID=16A
IS=18A, VGS=0V
30 V
1.2 3.0 V
±100 nA
1 μA
4.2 5
mΩ
5.4 6.2
0.8 1.2
V
VDS=15V, VGS=10V, ID=18A
VDS=15V, VGS=4.5V, ID=18A
VDS=15V, VGS=0V, F=1MHz
VDS=0V, VGS=0V, F=1MHz
VDD=15V, RL =1Ω
VGEN=10V, RG=6Ω
ID=18A
54.3
27
10.9
13.6
2732
339
258
1.7
24.8
128
77.2
18.5
nC
pF
Ω
ns
Note: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Aug, 2012-Ver1.1
DCC
正式發行
02





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