P-Channel MOSFET. ME7809-G Datasheet

ME7809-G MOSFET. Datasheet pdf. Equivalent

Part ME7809-G
Description P-Channel MOSFET
Feature P-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME7809 is the P-Channel logic enhancement mode po.
Manufacture Matsuki
Datasheet
Download ME7809-G Datasheet

P-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME7809 is ME7809-G Datasheet
Recommendation Recommendation Datasheet ME7809-G Datasheet




ME7809-G
P-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME7809 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology . This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and other battery
powered circuits in a very small outline surface mount package.
PIN CONFIGURATION
(DFN 3x3)
Botton View
ME7809/ME7809-G
FEATURES
RDS(ON)10mΩ@VGS=-10V
RDS(ON)16mΩ@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Battery Powered System
DC/DC Converter low side switching
Load Switch
* The Ordering Information: ME7809 (Pb-free)
ME7809-G (Green product- Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
Maximum Ratings
-30
±20
-16
-12
-50
28
18
-55 to 150
120
Unit
V
V
A
A
W
/W
The * * The device mounted on 1in2 FR4 board with 2 oz copper
DCC
正式發行
Mar, 2015-Ver1.0
01



ME7809-G
P-Channel 30-V(D-S) MOSFET
ME7809/ME7809-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
STATIC
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
IGSS Gate Leakage Current
VDS=0V, VGS=±25V
IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V
RDS(ON)
Drain-Source On-State Resistance VGS=-10V, ID=-15A
a
VGS=-4.5V, ID=-10A
VSD Diode Forward Voltage
DYNAMIC
IS=-2.3A, VGS=0V
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS=-15V, VGS=-4.5V, ID=-12A
Qgd Gate-Drain Charge
Ciss
Input capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
VDS=-15V, VGS=0V, f=1.0MHz
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=-15V, VGEN=-10V, ID=-12A
RG=1Ω, RL=1.5Ω
Min Typ Max Unit
-30 V
-1 -3 V
±100 nA
1 μA
6 10
mΩ
12 16
-0.7 -1.3
V
25
10
15
2100
400
330
15
15
35
10
nC
pF
μs
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Mar, 2015-Ver1.0
DCC
正式發行
02





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