ME7835

P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME7835 P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. ME7835/ME7835-G FEATURES ● RDS(ON) ≦18mΩ@VGS=-10V ● RDS(ON) ≦36mΩ@VGS=-4.5V APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC PIN CONFIGURATION (DFN 3.3x3.3) Top View e Ordering Information: ME7835 (Pb-free) ME7835-G (Green product-Halogen free) Absolute Maximum Ratings (Tj=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Conti...