FNK8A

N-Channel Enhancement Mode Power MOSFET Description TheFNK8A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS =16V,I D =8A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 11 mΩ @ VGS=3.8V RDS(ON) < 12mΩ @ VGS=2.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM application ●Load switch FNK8A Schematic diagram Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter ...