Power MOSFET. FNK8A Datasheet

FNK8A MOSFET. Datasheet pdf. Equivalent

Part FNK8A
Description N-Channel Power MOSFET
Feature N-Channel Enhancement Mode Power MOSFET Description TheFNK8A uses advanced trench technology to prov.
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N-Channel Enhancement Mode Power MOSFET Description TheFNK8A FNK8A Datasheet
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FNK8A
N-Channel Enhancement Mode Power MOSFET
Description
TheFNK8A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
General Features
VDS =16V,I D =8A
RDS(ON) < 10m@ VGS=4.5V
RDS(ON) < 11 m@ VGS=3.8V
RDS(ON) < 12m@ VGS=2.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
PWM application
Load switch
FNK8A
Schematic diagram
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=16V,VGS=0V
Limit
16
±10
8
30
1.5
-55 To 150
Unit
V
V
A
A
W
83.3 /W
Min Typ Max Unit
16 - V
- - 1 μA
FNK-Semiconductor
1/7
Jan.2018.Rev.1.0



FNK8A
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
FNK8A
VGS=±10V,VDS=0V
VDS=VGS,ID=250μA
VGS=4.5V, ID=6.0A
VGS=3.8V, ID=5.5A
VGS=2.5V, ID=5.5A
VDS=5V,ID=7A
-
- ±100
nA
0.45 0.7
-7
- 7.5
- 9.4
- 20
0.95
10
11
12
-
V
m
m
m
S
VDS=10V,VGS=0V,
F=1.0MHz
- 1150
- 185
- 145
-
-
-
PF
PF
PF
VDD=10V,RL=1.35
VGS=5V,RGEN=3
VDS=10V,ID=7A,
VGS=4.5V
-6
- 13
- 52
- 16
- 15
- 0.8
- 3.2
-
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=1A
- - 1.2
--
7
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
FNK-Semiconductor
2/7
Jan.2018.Rev.1.0





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