Power MOSFET. FNK2302 Datasheet

FNK2302 MOSFET. Datasheet pdf. Equivalent


Part FNK2302
Description N-Channel Power MOSFET
Feature DESCRIPTION The FNK 2302 uses advanced trench technology to provide excellent RDS(ON), low gate char.
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DESCRIPTION The FNK 2302 uses advanced trench technology to FNK2302 Datasheet
DESCRIPTION The FNK 2302A uses advanced trench technology to FNK2302A Datasheet
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FNK2302
DESCRIPTION
The FNK 2302 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
GENERAL FEATURES
VDS = 20V,ID =3.5A
RDS(ON) < 38m@ VGS=2.5V
RDS(ON) < 32m@ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
Battery protection
Load switch
Power management
FNK2302
D
G
S
Schematic diagram
Marking and pin Assignment
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2302A
FNK 2302A
SOT-23
Ø180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
ID
IDM
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±10
3.5
14
1.2
-55 To 150
Unit
V
V
A
A
W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
140 /W
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max
20
Unit
V
FNK-Semiconductor
1/7
Jan.2017.Rev.1.0



FNK2302
FNK2302
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=20V,VGS=0V
VGS=±10V,VDS=0V
VDS=VGS,ID=250μA
VGS=2.5V, ID=1A
VGS=4.5V, ID=1A
VDS=10V,ID=4.0A
0.4 0.7
27
23
5
VDS=10V,VGS=0V,
F=1.0MHz
500
250
90
VDD=10V, RL = 2.8
VGS=4.5V,RGEN=6,
ID=3.6A,
VDS=10V,ID=4.0A,VGS=4.5V
7
55
16
10
10
2.3
2.9
VGS=0V,IS=1.3A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production testing.
1
±100
1.0
38
32
1.2
μA
nA
V
m
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
FNK-Semiconductor
2/7
Jan.2017.Rev.1.0







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