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FNK10N25B Dataheets PDF



Part Number FNK10N25B
Manufacturers FNK
Logo FNK
Description N-Channel Power MOSFET
Datasheet FNK10N25B DatasheetFNK10N25B Datasheet (PDF)

FNK10N25B FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N25S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G D D G General Features ● VDS = 20V,Id = 8A RDS(ON) <18mΩ @ VGS=2.5V RDS(ON) < 14m Ω @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount pac.

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FNK10N25B FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N25S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G D D G General Features ● VDS = 20V,Id = 8A RDS(ON) <18mΩ @ VGS=2.5V RDS(ON) < 14m Ω @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package SS Schematic diagram Application ●Battery protection ●Load switch ●Power management TSSOP-8 top view Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package FNK10N25S FNK10N25S TSSOP-8L Reel Size Ø330mm Tape width 12 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Curre.


FNK10N25S FNK10N25B FNK2012E


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