FNK06N02D

FNK N-Channel Enhancement Mode Power MOSFET FNK06N02D General Description The FNK06N02D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) 20V 50A < 5.4mΩ < 7.2mΩ ● High Power and current handing capability ● Lead free product is acquired Application ●Battery Switch ●Load switch ●Power management Schematic diagram TO-252-2L top view Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.5mH C ID IDM IAS EAS TC=25°C Power Dissipation B TC=100°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 50 35 200 36 97 100 50 -55 to 175 Thermal Characteris...