Power MOSFET. FNK0203EA Datasheet

FNK0203EA MOSFET. Datasheet pdf. Equivalent


Part FNK0203EA
Description N-Channel Power MOSFET
Feature N-Channel Enhancement Mode Power MOSFET Description The FNK0203EA uses advanced trench technology to.
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FNK0203EA
N-Channel Enhancement Mode Power MOSFET
Description
The FNK0203EA uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
FNK0203EA
General Features
VDS = 20V,ID =10A
RDS(ON) < 19m@ VGS=2.5V
RDS(ON) < 13m@ VGS=4.5V
ESD Rating: 2500V HBM
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
Uni-directional load switch
Bi-directional load switch
Schematic diagram
Marking and pin assignment
DFN2*3-6 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=20V,VGS=0V
Limit
20
±12
8
30
2
-55 To 150
Unit
V
V
A
A
W
62.5 /W
Min Typ Max Unit
20 V
- - 1 μA
FNK-Semiconductor
1/7
Feb.2017.Rev.1.0



FNK0203EA
Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
FNK0203EA
Condition
VGS=±10V,VDS=0V
VDS=VGS,ID=250μA
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VDS=5V,ID=5A
VDS=10V,VGS=0V,
F=1.0MHz
Min Typ Max
- - ±10
Unit
μA
0.45 0.7
- 11
- 15
- 15
1.0
15
19
-
V
m
m
S
- 1800
- 230
- 200
-
-
-
PF
PF
PF
VDD=10V,RL=1.2
VGS=10V,RGEN=3
VDS=10V,ID=8A,
VGS=4.5V
- 2.5
- 7.2
- 49
- 10.8
- 17.9
- 1.5
- 4.7
-
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=8A
- - 1.2
--
8
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
FNK-Semiconductor
2/7
Feb.2017.Rev.1.0







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