FNK30H160
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK30H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =160A RDS(ON) <2.4 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.5V
● High density cell design for ultra low Rdso...
