FNK08N03D

FNK N-Channel Enhancement Mode Power MOSFET FNK08N03D Description TheFNK08N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V (Typ:5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Schematic diagram TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package FNK08N03D FNK08N03D TO-252 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage V...