Power MOSFET. FNK6520 Datasheet
The FNK6520 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device is
suitable for use as a high side switch in SMPS and
general purpose applications.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
Absolute Maximum Ratings TA=25°C unless otherwise noted
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.05mH C
Power Dissipation B TC=100°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
-55 to 150
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t ≤ 10s
Electrical Characteristics (TJ=25°C unless otherwise noted)
Min Typ Max Units
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th) Gate Threshold Voltage
1.5 1.95 2.5
On state drain current
RDS(ON) Static Drain-Source On-Resistance
6.5 11 mΩ
gFS Forward Transconductance
VSD Diode Forward Voltage
IS Maximum Body-Diode Continuous Current
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
920 1150 1380
125 180 235
60 105 150
0.55 1.1 1.65
Qg(10V) Total Gate Charge
16 20 24 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
7.6 9.5 11.4 nC
2 2.7 3.2 nC
Qgd Gate Drain Charge
3 5 7 nC
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75Ω,
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
7 8.7 10.5 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
11 13.5 16 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
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