FNK55H11

FNK55H11 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =110A RDS(ON) < 6m @ VGS=10V (Typ:4.5m ) Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package 55H11 FNK55H11 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuo...